Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
600V |
30（±V） |
3.5V |
16A |
|
|
230(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBE16R16S
- Brand: VBsemi
- Type: Single N-channel MOSFET
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 230m次
- Maximum drain current (ID): 16A
- Manufacturing process: SJ_Multi-EPI
-Package form: TO252
Domain and module applications：
Examples of applicable fields and modules:
1. Power management: VBE16R16S is suitable for various power management modules, such as switching power supplies, battery charge and discharge management systems, etc., providing stable and efficient power control and protection.
2. Automotive electronics: In automotive electronic systems, this device can be used in power switch modules such as engine control units (ECUs), on-board charging piles, and electric vehicle drive systems to achieve efficient power conversion and control.
3. LED lighting: VBE16R16S can be used as a power control module in LED lighting systems to provide stable power output and regulation to ensure the brightness and life of LED lamps.
4. Industrial automation: In industrial control systems, this device can be used in various motor control, switch control and power conditioning modules to provide reliable power control and protection functions for the efficient operation of industrial equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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