VBE16R12S Product details
Product introduction:
VBsemi's VBE16R12S is a single N-channel MOSFET designed for stability and high performance. Manufactured using SJ_Multi-EPI technology, suitable for various electronic applications.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 30(±V) | 3.5V | 12A | 340(mΩ) | SJ_Multi-EPI |
- Brand: VBsemi
- Model: VBE16R12S
- MOSFET type: Single N-channel
- Rated drain-source voltage (VDS): 600V
- Standard gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 340
- Maximum drain current (ID): 12A
- Process technology: SJ_Multi-EPI
-Package:TO252
Domain and module applications:
1. Power management module: The stability and high performance of VBE16R12S make it suitable for various power management modules, such as switching power supplies, voltage regulators and DC-DC converters.
2. Lighting system: In LED drivers and lighting systems, this MOSFET can be used for dimming control, power factor correction and switching dimming.
3. Industrial control module: In industrial automation and control systems, VBE16R12S can be used in motor drivers, inverters and industrial control modules to improve system efficiency and stability.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image