Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
600V |
30（±V） |
3.5V |
12A |
|
|
340(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Brand: VBsemi
- Model: VBE16R12S
- MOSFET type: Single N-channel
- Rated drain-source voltage (VDS): 600V
- Standard gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 340
- Maximum drain current (ID): 12A
- Process technology: SJ_Multi-EPI
-Package:TO252
Domain and module applications：
Examples of applicable fields and modules:
1. Power management module: The stability and high performance of VBE16R12S make it suitable for various power management modules, such as switching power supplies, voltage regulators and DC-DC converters.
2. Lighting system: In LED drivers and lighting systems, this MOSFET can be used for dimming control, power factor correction and switching dimming.
3. Industrial control module: In industrial automation and control systems, VBE16R12S can be used in motor drivers, inverters and industrial control modules to improve system efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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