VBE16R10S Product details
Product introduction:
VBsemi's VBE16R10S is a single N-channel MOSFET designed for high performance and reliability. Manufactured using SJ_Multi-EPI technology, suitable for a variety of electronic applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 30(±V) | 3.5V | 10A | 470 (mΩ) | SJ_Multi-EPI |
- Brand: VBsemi
- Model: VBE16R10S
- MOSFET type: Single N-channel
- Rated drain-source voltage (VDS): 600V
- Standard gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 470
- Maximum drain current (ID): 10A
- Process technology: SJ_Multi-EPI
-Package:TO252
Domain and module applications:
1. Power module: VBE16R10S can be used in switching power modules, voltage regulators and DC-DC converters to provide high-efficiency power solutions.
2. LED driver: In LED lighting systems, this MOSFET can be used for the power control and dimming functions of LED drivers to improve the efficiency and adjustability of the lighting system.
3. Power tools: VBE16R10S can be used in motor drive control modules in power tools, such as electric drills, electric hammers, etc., to provide stable and reliable power output and enhance the performance and service life of the tools.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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