Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
600V |
30（±V） |
3.5V |
10A |
|
|
470 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Brand: VBsemi
- Model: VBE16R10S
- MOSFET type: Single N-channel
- Rated drain-source voltage (VDS): 600V
- Standard gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 470
- Maximum drain current (ID): 10A
- Process technology: SJ_Multi-EPI
-Package:TO252
Domain and module applications：
Examples of applicable fields and modules:
1. Power module: VBE16R10S can be used in switching power modules, voltage regulators and DC-DC converters to provide high-efficiency power solutions.
2. LED driver: In LED lighting systems, this MOSFET can be used for the power control and dimming functions of LED drivers to improve the efficiency and adjustability of the lighting system.
3. Power tools: VBE16R10S can be used in motor drive control modules in power tools, such as electric drills, electric hammers, etc., to provide stable and reliable power output and enhance the performance and service life of the tools.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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