Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
650V |
30（±V） |
3.5V |
15A |
|
|
220(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Model: VBE165R15SE
- Brand: VBsemi
- Type: Single N MOSFET
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-to-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 10V: 220m次
- Maximum drain current (ID): 15A
- Technology: SJ_Deep-Trench
-Package:TO252
Domain and module applications：
Example application:
1. Power module: VBE165R15SE is suitable for power switches in power modules, such as inverters and switching power supplies, providing reliable power conversion and control functions.
2. Electric vehicle controller: In the electric vehicle controller, this device can be used in motor drive and battery management systems to achieve efficient energy conversion and power output control.
3. Solar inverter: In solar photovoltaic systems, VBE165R15SE can be used in the DC-AC conversion stage of the inverter to convert solar energy into usable alternating current.
4. Industrial automation equipment: This device is suitable for power switch modules in industrial robots, automation equipment, PLC and other systems, providing reliable power control and protection functions.
5. LED lighting system: As a power switching device in LED lighting systems, VBE165R15SE can be used in LED drive circuits to achieve lighting brightness adjustment and energy-saving functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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