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VBE165R12S Product details

Product introduction:

Product introduction:
VBsemi's VBE165R12S is a single N-channel field effect transistor suitable for a variety of power electronic applications. The device has a drain-to-source voltage (VDS) of 650V, a drain current (ID) of 12A, and a threshold voltage (Vth) of 3.5V. Manufactured using SJ_Multi-EPI technology and packaged in TO252, it has good heat dissipation performance and stability. As a high-performance field effect transistor, VBE165R12S has broad application prospects in these fields.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 30(±V) 3.5V 12A 340(mΩ) SJ_Multi-EPI
Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Static drain-source resistance (VGS=10V): 340 m次
- Drain current (ID): 12A
- Technology: SJ_Multi-EPI
-Package:TO252

Domain and module applications:

Application examples:
1. Power management module: VBE165R12S can be used in switching power supplies, inverters and other parts of various power management modules to provide stable power output.
2. LED lighting driver: In LED lighting products, VBE165R12S can be used as a switching element in the LED driver module to provide stable current output.
3. Industrial automation control system: In industrial automation control systems, VBE165R12S can be used as a switch control device to achieve efficient control of various equipment and machines.
4. Solar inverter: In the solar inverter, VBE165R12S can be used to convert the DC power generated by the solar panel into AC power, which is suitable for the inverter part of the solar power generation system.
5. Electric vehicle charging piles: In electric vehicle charging piles, VBE165R12S can be used as a switching element to achieve fast charging control of electric vehicles.

These fields and modules require high-performance power devices to achieve stable power supply and effective energy conversion. As a high-performance field effect transistor, VBE165R12S has broad application prospects in these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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