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VBE165R11S Product details

Product introduction:

Product introduction: VBsemi's VBE165R11S is a single N-type field effect transistor with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. It is suitable for for a variety of power and electronic applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 30(±V) 3.5V 11A 370(mΩ) SJ_Multi-EPI
Detailed parameter description:
- VDS (drain-source voltage): 650V
- VGS (gate-to-source voltage): ㊣30V
- Vth (gate threshold voltage): 3.5V
- On-resistance (m次) when VGS=10V: 370
- Maximum drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO252

Domain and module applications:

Application example:
- Power inverter: suitable for high-voltage power conversion applications such as solar inverters and UPS inverters, providing stable power conversion and reliable performance.
- Industrial control: It can be used for industrial motor control, frequency converters and other equipment to meet the needs of high voltage and medium current in the field of industrial automation.
- Automotive electronics: In automotive electronic systems, it can be used in power battery management systems and motor drive systems of electric vehicles, supporting high-voltage and high-power application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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