VBE165R09S Product details
Product introduction:
VBsemi VBE165R09S is a Single N MOSFET, using SJ_Multi-EPI technology and packaged in TO252. Offers excellent performance and stability for a variety of power supply and power control applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 30(±V) | 3.5V | 9A | 500 (mΩ) | SJ_Multi-EPI |
- Brand: VBsemi
- Product model: VBE165R09S
- MOSFET type: Single N
- Rated voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 500m次
- Maximum continuous drain current (ID): 9A
- Technology: SJ_Multi-EPI
-Package:TO252
Domain and module applications:
1. Industrial power module: Due to its high voltage and high on-current characteristics, VBE165R09S can be widely used in industrial power modules, such as motor drives and inverters.
2. Automotive electronics: Its stability and high voltage resistance make it an ideal choice for automotive electronic systems, such as power conversion modules and charging pile controllers for electric vehicles.
3. Solar inverter: As a key component in a solar inverter, VBE165R09S can effectively convert DC power generated by solar panels into AC power.
4. LED lighting: In LED lighting applications, VBE165R09S can be used as a switching tube in the power driver to achieve efficient power conversion and dimming control.
Technical support:
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