Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
650V |
30（±V） |
3.5V |
9A |
|
|
500 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Brand: VBsemi
- Product model: VBE165R09S
- MOSFET type: Single N
- Rated voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 500m次
- Maximum continuous drain current (ID): 9A
- Technology: SJ_Multi-EPI
-Package:TO252
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial power module: Due to its high voltage and high on-current characteristics, VBE165R09S can be widely used in industrial power modules, such as motor drives and inverters.
2. Automotive electronics: Its stability and high voltage resistance make it an ideal choice for automotive electronic systems, such as power conversion modules and charging pile controllers for electric vehicles.
3. Solar inverter: As a key component in a solar inverter, VBE165R09S can effectively convert DC power generated by solar panels into AC power.
4. LED lighting: In LED lighting applications, VBE165R09S can be used as a switching tube in the power driver to achieve efficient power conversion and dimming control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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