Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
650V |
30（±V） |
3.5V |
8A |
|
|
560(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Brand: VBsemi
- Model: VBE165R08S
- Type: Single N-channel field effect transistor
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 560
- Maximum drain current (ID): 8A
- Technology: SJ_Multi-EPI
-Package:TO252
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial power supply: Because VBE165R08S has high voltage resistance and current tolerance, it is suitable for designing industrial power modules to ensure stable and reliable power output.
2. Electric vehicle charging piles: In electric vehicle charging piles, high-performance power devices are required to handle high voltage and large current. VBE165R08S can be used as a key power switching element.
3. Frequency converter: In frequency converters and variable frequency speed regulators, transistors with excellent conduction characteristics and voltage resistance are required to achieve power conversion and motor control. This product can meet these requirements.
4. Solar inverter: suitable for power conversion and control circuits in solar inverters, providing high efficiency and reliability energy conversion solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
