VBE165R08S Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 30(±V) | 3.5V | 8A | 560(mΩ) | SJ_Multi-EPI |
- Brand: VBsemi
- Model: VBE165R08S
- Type: Single N-channel field effect transistor
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 560
- Maximum drain current (ID): 8A
- Technology: SJ_Multi-EPI
-Package:TO252
Domain and module applications:
1. Industrial power supply: Because VBE165R08S has high voltage resistance and current tolerance, it is suitable for designing industrial power modules to ensure stable and reliable power output.
2. Electric vehicle charging piles: In electric vehicle charging piles, high-performance power devices are required to handle high voltage and large current. VBE165R08S can be used as a key power switching element.
3. Frequency converter: In frequency converters and variable frequency speed regulators, transistors with excellent conduction characteristics and voltage resistance are required to achieve power conversion and motor control. This product can meet these requirements.
4. Solar inverter: suitable for power conversion and control circuits in solar inverters, providing high efficiency and reliability energy conversion solutions.
Technical support:
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