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VBE165R07SE Product details

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Product introduction：

Product Introduction: VBsemi’s VBE165R07SE model is a single N-channel MOSFET with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V . This product is manufactured using SJ_Deep-Trench technology and is packaged in TO252.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 30（±V） 3.5V 7A 600(mΩ) SJ_Deep-Trench
Detailed parameter description:
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: 600m次
- Maximum drain current (ID): 7A
- Technology: SJ_Deep-Trench
-Package: TO252

Domain and module applications：

Examples of applicable fields and modules:
- Power module: Due to the drain-source voltage of 650V and the maximum drain current of 7A, it is suitable for medium power power modules such as power inverters and industrial power supplies.
- Automotive electronics: Can be used in power switches in automotive electronic modules, such as engine control units and electric vehicle drives, to achieve efficient electric vehicle power control.
- Solar inverter: suitable for power switching modules in solar inverters to achieve high-efficiency conversion of solar photovoltaic power generation systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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