MOSFET

Your present location > Home page > MOSFET

VBE165R04SE Product details

Product introduction:

Product Introduction: VBsemi’s VBE165R04SE model is a single N-channel MOSFET with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V . This product is manufactured using SJ_Deep-Trench technology and is packaged in TO252.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 30(±V) 3.5V 4A 950(mΩ) SJ_Deep-Trench
Detailed parameter description:
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: 950m次
- Maximum drain current (ID): 4A
- Technology: SJ_Deep-Trench
-Package: TO252

Domain and module applications:

Examples of applicable fields and modules:
- Power module: Due to the drain-source voltage of 650V and the maximum drain current of 4A, it is suitable for low and medium power power modules such as inverters and voltage regulators.
- LED lighting: It can be used as a power switch module in LED lighting drive circuits to achieve efficient driving and control of LED lamps.
- Automotive electronics: Suitable for power switches in automotive electronic modules, such as engine control units and electric vehicle chargers, to achieve efficient management of vehicle power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

Online

Telephone

400-655-8788

WeChat

Topping

Sample Req
Online
Telephone
WeChat