Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
650V |
30（±V） |
3.5V |
4A |
|
2750 (mΩ) |
2200 (mΩ) |
Plannar |
Parameter Description:
- Model: VBE165R04
- Brand: VBsemi
- Type: Single N-channel field effect transistor (MOSFET)
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=4.5V: 2750m次
- On-resistance when VGS=10V: 2200m次
- Maximum drain current (ID): 4A
- Technology: Plannar
-Package:TO252
Domain and module applications：
Application areas and module examples:
This product is suitable for the following areas and modules:
1. Power inverter: Inverter used in industrial, household, automotive electronics and other fields to convert DC power into AC power.
2. Electric vehicle charging pile: As a power switching element in the electric vehicle charging pile, it controls the current and voltage during the charging process.
3. UPS system: In uninterruptible power supply system, used for backup power switch and battery management.
4. Wind and solar inverters: used in wind power and solar power systems as a key component of the inverter.
5. Industrial automation equipment: used for power switch control in factory automation control systems, robots and power tools.
These fields and modules require high-performance, high-reliability power switching components to achieve power control and conversion functions, and VBE165R04 is an ideal choice to meet these requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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