Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
650V |
30（±V） |
3.5V |
3A |
|
|
1600(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Product model: VBE165R03SE
- Brand: VBsemi
- Type: Single N-channel field effect transistor
-Package: TO252
- VDS (withstand voltage): 650V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: 1600m次
- Maximum drain current (ID): 3A
- Technology: SJ_Deep-Trench
Domain and module applications：
Application areas and module examples:
1. Power Inverter: VBE165R03SE can be used in the switch module of the power inverter to convert DC power into AC power for various household and commercial electrical appliances.
2. Wind energy conversion system: In the wind energy conversion system, this product can be used in the inverter and control module of the wind turbine generator set to achieve efficient conversion and utilization of wind energy.
3. Industrial controller: Suitable for power switches, inverters and other modules in industrial control systems to ensure the normal operation and production efficiency of factory equipment.
4. Automotive electronic systems: In automotive electronic systems, VBE165R03SE can be used in motor drivers and charging controller modules for electric vehicles, providing efficient power output and charging services.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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