VBE165R03SE Product details
Product introduction:
VBsemi VBE165R03SE is a single N-channel field effect transistor manufactured using SJ_Deep-Trench technology. It has the characteristics of high reliability and excellent performance, and is suitable for various power electronic applications.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 30(±V) | 3.5V | 3A | 1600(mΩ) | SJ_Deep-Trench |
- Product model: VBE165R03SE
- Brand: VBsemi
- Type: Single N-channel field effect transistor
-Package: TO252
- VDS (withstand voltage): 650V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: 1600m次
- Maximum drain current (ID): 3A
- Technology: SJ_Deep-Trench
Domain and module applications:
1. Power Inverter: VBE165R03SE can be used in the switch module of the power inverter to convert DC power into AC power for various household and commercial electrical appliances.
2. Wind energy conversion system: In the wind energy conversion system, this product can be used in the inverter and control module of the wind turbine generator set to achieve efficient conversion and utilization of wind energy.
3. Industrial controller: Suitable for power switches, inverters and other modules in industrial control systems to ensure the normal operation and production efficiency of factory equipment.
4. Automotive electronic systems: In automotive electronic systems, VBE165R03SE can be used in motor drivers and charging controller modules for electric vehicles, providing efficient power output and charging services.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image