Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
1200V |
30（±V） |
3.5V |
2A |
|
|
4500 (mΩ) |
Plannar |
Detailed parameter description:
- Brand: VBsemi
- Model: VBE112MR02
- Type: Single N-type power MOSFET
- Rated voltage (VDS): 1200V
- Gate-source voltage range (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(on)) when gate-source voltage is 10V: 4500 m次
- Rated current (ID): 2A
- Technology: Plannar
-Package:TO252
Domain and module applications：
Examples of applicable fields and modules:
1. LED driver: Since VBE112MR02 has low power and moderate voltage parameters, it can be used as a switching power supply module in an LED lamp driver to provide stable driving current for LED lamps.
2. Power management module: In some low-power power management modules, such as small inverters and voltage regulators, VBE112MR02 can be used as a power switching device for voltage conversion and stable output.
3. Solar charge controller: In solar charge controller, VBE112MR02 can be used as a charge and discharge control module to ensure effective energy conversion between solar panels and batteries.
The above is an introduction to the VBE112MR02 product, detailed parameter descriptions and examples of paragraphs in applicable fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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