VBE112MR02 Product details
Product introduction:
VBE112MR02 is a single N-type power field effect transistor (MOSFET) launched by VBsemi, using Plannar technology. This product has the characteristics of high withstand voltage and low on-resistance, and is suitable for some low-power power electronic applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 1200V | 30(±V) | 3.5V | 2A | 4500 (mΩ) | Plannar |
- Brand: VBsemi
- Model: VBE112MR02
- Type: Single N-type power MOSFET
- Rated voltage (VDS): 1200V
- Gate-source voltage range (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(on)) when gate-source voltage is 10V: 4500 m次
- Rated current (ID): 2A
- Technology: Plannar
-Package:TO252
Domain and module applications:
Examples of applicable fields and modules:
1. LED driver: Since VBE112MR02 has low power and moderate voltage parameters, it can be used as a switching power supply module in an LED lamp driver to provide stable driving current for LED lamps.
2. Power management module: In some low-power power management modules, such as small inverters and voltage regulators, VBE112MR02 can be used as a power switching device for voltage conversion and stable output.
3. Solar charge controller: In solar charge controller, VBE112MR02 can be used as a charge and discharge control module to ensure effective energy conversion between solar panels and batteries.
The above is an introduction to the VBE112MR02 product, detailed parameter descriptions and examples of paragraphs in applicable fields.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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