Product introduction：
**Application Introduction:**
SI7884BDP-T1-GE3-VB is an N-Channel field effect transistor with excellent performance such as high leakage current, low leakage voltage, and low on-resistance. It adopts DFN8 (5X6) standard package and is suitable for a variety of electronic applications.
**Precautions for use:**
- Please use it in accordance with the specifications and application guidelines provided by the manufacturer, and ensure that the operating conditions are within the specified range of the component.
- Ensure that the circuit design is reasonable to prevent damage to the device due to overcurrent, overvoltage, etc.
- Pay attention to proper heat dissipation design, especially in high-power applications, to ensure that the device is within the normal operating temperature range.
- Follow the relevant standards for welding and packaging to ensure reliable connection between the device and the circuit board.
The above are general suggestions, and specific use should be considered in detail according to actual conditions and application requirements.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
40V |
|
2.5V |
70A |
|
6(mΩ) |
4.7(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
40V |
|
2.5V |
70A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
40V |
|
2.5V |
70A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
Model: SI7884BDP-T1-GE3-VB
Silkscreen: VBQA1405
Brand: VBsemi
Package: DFN8(5X6)
**Detailed parameter description:**
- **Channel Type：** N—Channel
- **Maximum Drain Current：** 75A
- **Maximum Drain-Source Voltage：** 40V
- **On-Resistance：** RDS(ON)=4.7mΩ @ VGS=10V,
--VGS=±20V
- **Gate Threshold Voltage：** Vth=1.9V
Domain and module applications：
**Main application area modules:**
1. **Power switch module:** Due to the N-Channel structure of SI7884BDP-T1-GE3-VB, it is suitable for power switch modules to achieve efficient power control and management.
2. **Motor drive module:** Due to its high leakage current and low on-resistance, it can be used in motor drive modules to ensure efficient performance when the motor is running.
3. **Power inverter module:** Suitable for power inverter modules to convert DC power to AC power, such as for solar inverters.
4. **High current load switch module:** Due to the maximum leakage current of 75A, it can be used in high current load switch modules, such as power switch circuits, high power LED drivers, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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