Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
100V |
20（±V） |
1.8V |
40A |
|
34 (mΩ) |
32 (mΩ) |
Trench |
parameter:
- Type: Single N-channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 100V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V
- On-resistance (m次) when gate-source voltage is 4.5V: 34m次
- On-resistance (m次) when gate-source voltage is 10V: 32m次
- Maximum drain current (ID): 40A
- Technical features: Trench
Package: TO252
Domain and module applications：
The product is suitable for various fields and modules, as follows:
1. **Power module**:
Because VBE1104NB has high drain-source voltage and drain current, it is suitable for use as the main switch or synchronous rectifier in switching power supply modules, providing reliable power conversion and efficient energy transfer.
2. **Electric Vehicles**:
In electric vehicles, this product can be used as a power switch for motor drivers, enabling efficient energy conversion and reliable performance of electric vehicles.
3. **Industrial Automation**:
In the field of industrial automation, VBE1104NB can be used in various industrial control modules and drives, such as frequency converters, PLC systems and robot controllers, to achieve precise motion control and reliable system operation.
4. **Solar Inverter**:
Due to its high voltage and current characteristics, this product is suitable for power switches in solar inverter modules for energy conversion and output control of solar panels.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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