Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
100V |
20（±V） |
1.8V |
40A |
|
35 (mΩ) |
30 (mΩ) |
Trench |
parameter:
- Type: Single N-type field effect transistor
- Maximum drain-source voltage (VDS): 100V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V
- Drain-source resistance (m次) at VGS=4.5V: 35
- Drain-source resistance (m次) at VGS=10V: 30
- Maximum drain current (ID): 40A
- Technology: Channel
Package: TO252
Domain and module applications：
Example 1: Suitable for automotive electronic modules
The transistor has a high drain current capacity and low drain-source resistance, making it ideal for use as a power switching device in automotive electronic modules. In automotive electronic modules, it can be used in engine control, electric power steering, on-board charging piles and other applications to ensure the stability and performance of automotive systems.
Example 2: Applicable to industrial control module
Due to its reliable performance and high current capacity, VBE1104N is suitable for use as power switching devices in industrial control modules. In industrial control modules, it can be used in motor drives, frequency converters, UPS systems and other applications to achieve efficient operation and reliability of industrial equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
