Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TSSOP8 |
Dual-N+P |
±30V |
20（±V） |
2/-2V |
6.2/5A |
|
2/14(mΩ) |
2/7(mΩ) |
Trench |
2. Detailed parameter description:
- Model: VBC8338
- Brand: VBsemi
- MOSFET type: Dual N+P
- Drain-source voltage (VDS): ㊣30V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 2V (N channel)/-2V (P channel)
- On-resistance (m次) at VGS=4.5V: 2/14 (N/P channel)
- On-resistance (m次) at VGS=10V: 2/7 (N/P channel)
- Drain current (ID): 6.2A (N channel)/5A (P channel)
- Technology: Trench
-Package: TSSOP8
Domain and module applications：
3. Examples of application areas and modules:
This product is suitable for the following areas and modules:
1. Power management: used for power switch control in power management systems such as power switches, DC-DC converters and inverters.
2. Consumer electronics: Suitable for power management and power control in consumer electronics products such as mobile devices, laptops and tablets.
3. Communication equipment: Power switch control modules used in communication equipment such as base stations, communication network equipment, and routers.
4. Automotive electronics: suitable for automotive electronic modules such as automotive electronic systems, vehicle entertainment systems and vehicle chargers.
5. Industrial control: used for power switch control in industrial control systems such as PLC, industrial robots and automated production lines.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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