VBC8338 Product details
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+P | ±30V | 20(±V) | 2/-2V | 6.2/5A | 2/14(mΩ) | 2/7(mΩ) | Trench |
- Model: VBC8338
- Brand: VBsemi
- MOSFET type: Dual N+P
- Drain-source voltage (VDS): ㊣30V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 2V (N channel)/-2V (P channel)
- On-resistance (m次) at VGS=4.5V: 2/14 (N/P channel)
- On-resistance (m次) at VGS=10V: 2/7 (N/P channel)
- Drain current (ID): 6.2A (N channel)/5A (P channel)
- Technology: Trench
-Package: TSSOP8
Domain and module applications:
3. Examples of application areas and modules:
This product is suitable for the following areas and modules:
1. Power management: used for power switch control in power management systems such as power switches, DC-DC converters and inverters.
2. Consumer electronics: Suitable for power management and power control in consumer electronics products such as mobile devices, laptops and tablets.
3. Communication equipment: Power switch control modules used in communication equipment such as base stations, communication network equipment, and routers.
4. Automotive electronics: suitable for automotive electronic modules such as automotive electronic systems, vehicle entertainment systems and vehicle chargers.
5. Industrial control: used for power switch control in industrial control systems such as PLC, industrial robots and automated production lines.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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