Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
TSSOP8 |
Dual-P+P |
-30V |
20(±V) |
-1.7V |
-5.2A |
|
55 (mΩ) |
36 (mΩ) |
Trench |
**VBsemi VBC6P3033**
**Brand:** VBsemi
**parameter:**
- **Dual P+P:** Dual P-type field effect transistor
- **VDS(V):** Drain-source voltage: -30V
- **VGS(㊣V):** Gate-source voltage range: ㊣20V
- **Vth(V):** Threshold voltage: -1.7V
- **VGS=4.5V(m次):** On-resistance when gate-source voltage is 4.5V: 55m次
- **VGS=10V(m次):** On-resistance when gate-source voltage is 10V: 36m次
- **ID (A):** Drain current: -5.2A
- **Technology:** Technology: Trench (trench structure)
**Package:**
- **TSSOP8:** 8-pin TSSOP package
Domain and module applications:
**Application examples:**
1. **Power Management Module:** VBC6P3033 can be used in the power switching circuit and power controller in the power management module. For example, it can be used in power management modules in smartphones or tablets to implement battery charge and discharge control and power management.
2. **DC-DC converter:** Due to its small drain current and low on-resistance, VBC6P3033 is suitable for power switching circuits in DC-DC converters. For example, in portable electronics, it can be used in power switches in DC-DC converters to achieve voltage conversion and current regulation.
3. **LED drive module:** In LED lighting systems, VBC6P3033 can be used as the power switch and current control device in the LED drive module. The smaller drain current and low on-resistance ensure the stable operation and high-efficiency conversion of the LED lamp series circuit.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours