Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±60V |
20（±V） |
1.8/-1.7V |
5.3/-4.9A |
|
29/60(mΩ) |
26/55(mΩ) |
Trench |
Detailed parameter description:
- Brand: VBsemi
- Product model: VBA5638
- Type: Dual N-type and P-type field effect transistors
- VDS (drain-source voltage): ㊣60V
- VGS (gate-source voltage): 20V
- Vth (threshold voltage): 1.8/-1.7V
- RDS(on) On-resistance at VGS=4.5V: 29/60 m次
- RDS(on) On-resistance at VGS=10V: 26/55 m次
- Maximum drain current (ID): 5.3/-4.9A
- Technology: Trench
-Package: SOP8
Domain and module applications：
Application examples:
1. Power electronics field: switches and control devices used in high-voltage direct current transmission systems.
2. Industrial power module: suitable for power management and power switching in industrial equipment.
3. Electric vehicles: Power switch modules used in electric drive systems of electric vehicles and hybrid vehicles.
4. Solar inverter: used in inverter circuits in solar photovoltaic power generation systems.
5. Communication equipment: suitable for power amplification and adjustment modules in wireless communication equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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