Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±40V |
20（±V） |
1.8/-1.7V |
9/-8A |
|
18/22(mΩ) |
15/17(mΩ) |
Trench |
Detailed parameter description:
- Product model: VBA5415
- Brand: VBsemi
- Type: Dual N+P channel field effect transistor
- Rated voltage: VDS=㊣40V, VGS=㊣20V
- Threshold voltage: Vth=1.8V (N-channel) / -1.7V (P-channel)
- Drain-source on-resistance (when VGS=4.5V): 18m次 (N channel) / 22m次 (P channel)
- Drain-source on-resistance (when VGS=10V): 15m次 (N channel) / 17m次 (P channel)
- Maximum drain current: 9A (N-channel) / -8A (P-channel)
- Technology: Trench
-Package: SOP8
Domain and module applications：
Examples of applicable fields and modules:
- Power management module: suitable for various power switches and voltage regulator modules, such as mobile phone chargers and computer power supplies.
- Automotive electronic modules: can be used in power switches and drive control modules in automotive power systems, such as on-board chargers and power systems of electric vehicles.
- Industrial control module: suitable for switching power supplies and motor driver modules in industrial control systems, such as industrial automation equipment and robot control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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