VBA5415 Product details
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±40V | 20(±V) | 1.8/-1.7V | 9/-8A | 18/22(mΩ) | 15/17(mΩ) | Trench |
- Product model: VBA5415
- Brand: VBsemi
- Type: Dual N+P channel field effect transistor
- Rated voltage: VDS=㊣40V, VGS=㊣20V
- Threshold voltage: Vth=1.8V (N-channel) / -1.7V (P-channel)
- Drain-source on-resistance (when VGS=4.5V): 18m次 (N channel) / 22m次 (P channel)
- Drain-source on-resistance (when VGS=10V): 15m次 (N channel) / 17m次 (P channel)
- Maximum drain current: 9A (N-channel) / -8A (P-channel)
- Technology: Trench
-Package: SOP8
Domain and module applications:
Examples of applicable fields and modules:
- Power management module: suitable for various power switches and voltage regulator modules, such as mobile phone chargers and computer power supplies.
- Automotive electronic modules: can be used in power switches and drive control modules in automotive power systems, such as on-board chargers and power systems of electric vehicles.
- Industrial control module: suitable for switching power supplies and motor driver modules in industrial control systems, such as industrial automation equipment and robot control systems.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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