Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±40V |
20（±V） |
1.8/-1.7V |
12/-10A |
|
12/15(mΩ) |
10/13(mΩ) |
Trench |
Detailed parameter description:
- Product model: VBA5410
- Brand: VBsemi
- Type: Dual N+P type MOSFET
- Maximum drain-source voltage (VDS): ㊣40V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V/-1.7V
- Drain-source resistance (m次) at VGS=4.5V: 12/15
- Drain-source resistance (m次) at VGS=10V: 10/13
- Maximum drain current (ID): 12A/-10A
- Technology: Trench
-Package: SOP8
Domain and module applications：
Application examples:
The product is suitable for a variety of fields and modules, such as:
1. Power management: It can be used in power management modules such as switching power supplies and voltage regulators to provide reliable power control and regulation functions.
2. Electric vehicles: Applicable to battery management systems, drive control and other modules in electric vehicles to improve vehicle performance and driving experience.
3. Industrial control: It can be used in power control, motor control and other modules in industrial automation systems to improve production efficiency and stability.
4. LED lighting: Suitable for power switch components in LED lighting control circuits to realize light adjustment and control and improve energy utilization.
The above are some examples of applications of this product in different fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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