Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
20（±V） |
1.8/-1.7V |
15/-10.5A |
|
10/21(mΩ) |
7.2/17(mΩ) |
Trench |
Detailed parameter description:
- Brand: VBsemi
- Product model: VBA5307
- Type: Dual N-type and P-type field effect transistors
- VDS (drain-source voltage): ㊣30V
- VGS (gate-source voltage): 20V
- Vth (threshold voltage): 1.8/-1.7V
- RDS(on) On-resistance at VGS=4.5V: 10/21 m次
- RDS(on) On-resistance at VGS=10V: 7.2/17 m次
- Maximum drain current (ID): 15/-10.5A
- Technology: Trench
-Package: SOP8
Domain and module applications：
Application examples:
1. Power inverter: used in power switches and control devices in industrial and household inverters.
2. Electric vehicle controller: suitable for power switch modules in the electric drive system of electric vehicles.
3. Solar Charge Controller: Power conditioning unit for solar panel charge controller.
4. Power management module: suitable for battery management and power switching in portable electronic devices.
5. Communication equipment: Power amplification and conditioning modules used in wireless routers, base stations and optical fiber communications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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