VBA5307 Product details
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±30V | 20(±V) | 1.8/-1.7V | 15/-10.5A | 10/21(mΩ) | 7.2/17(mΩ) | Trench |
- Brand: VBsemi
- Product model: VBA5307
- Type: Dual N-type and P-type field effect transistors
- VDS (drain-source voltage): ㊣30V
- VGS (gate-source voltage): 20V
- Vth (threshold voltage): 1.8/-1.7V
- RDS(on) On-resistance at VGS=4.5V: 10/21 m次
- RDS(on) On-resistance at VGS=10V: 7.2/17 m次
- Maximum drain current (ID): 15/-10.5A
- Technology: Trench
-Package: SOP8
Domain and module applications:
Application examples:
1. Power inverter: used in power switches and control devices in industrial and household inverters.
2. Electric vehicle controller: suitable for power switch modules in the electric drive system of electric vehicles.
3. Solar Charge Controller: Power conditioning unit for solar panel charge controller.
4. Power management module: suitable for battery management and power switching in portable electronic devices.
5. Communication equipment: Power amplification and conditioning modules used in wireless routers, base stations and optical fiber communications.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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