VBA5213 Product details
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±20V | 12(±V) | 1.0/-1.2V | 8/-6.1A | 15/32(mΩ) | 13/24(mΩ) | Trench |
- Product model: VBA5213
- Brand: VBsemi
- Type: Dual N+P channel field effect transistor
- Rated voltage: VDS=㊣20V, VGS=㊣12V
- Threshold voltage: Vth=1.0V (N-channel) / -1.2V (P-channel)
- Drain-source on-resistance (when VGS=2.5V): 15m次 (N channel) / 32m次 (P channel)
- Drain-source on-resistance (when VGS=4.5V): 13m次 (N channel) / 24m次 (P channel)
- Maximum drain current: 8A (N-channel) / -6.1A (P-channel)
- Technology: Trench
-Package: SOP8
Domain and module applications:
- Power management module: can be used for power switches and protection circuits, suitable for various electronic equipment and systems, such as power inverters and power management modules.
- Motor driver module: Motor controller and driver module suitable for driving DC motors and stepper motors, such as robot control systems and industrial automation equipment.
- Signal amplifier module: It can be used to amplify signals and control circuits, and is suitable for analog circuit design in fields such as communication equipment and audio amplifiers.
Technical support:
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