Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±20V |
12（±V） |
1.0/-1.2V |
8/-6.1A |
15/32(mΩ) |
13/24(mΩ) |
|
Trench |
Detailed parameter description:
- Product model: VBA5213
- Brand: VBsemi
- Type: Dual N+P channel field effect transistor
- Rated voltage: VDS=㊣20V, VGS=㊣12V
- Threshold voltage: Vth=1.0V (N-channel) / -1.2V (P-channel)
- Drain-source on-resistance (when VGS=2.5V): 15m次 (N channel) / 32m次 (P channel)
- Drain-source on-resistance (when VGS=4.5V): 13m次 (N channel) / 24m次 (P channel)
- Maximum drain current: 8A (N-channel) / -6.1A (P-channel)
- Technology: Trench
-Package: SOP8
Domain and module applications：
Examples of applicable fields and modules:
- Power management module: can be used for power switches and protection circuits, suitable for various electronic equipment and systems, such as power inverters and power management modules.
- Motor driver module: Motor controller and driver module suitable for driving DC motors and stepper motors, such as robot control systems and industrial automation equipment.
- Signal amplifier module: It can be used to amplify signals and control circuits, and is suitable for analog circuit design in fields such as communication equipment and audio amplifiers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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