Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±20V |
12（±V） |
1.0/-1.2V |
15/-8.5A |
10/20(mΩ) |
6/16(mΩ) |
|
Trench |
Detailed parameter description:
- Brand: VBsemi
- Model: VBA5206
- Type: Dual N+P type power MOSFET
- Rated voltage (VDS): ㊣20V
- Gate-source voltage range (VGS): ㊣12V
- Threshold voltage (Vth): 1.0V (N type), -1.2V (P type)
- On-resistance (RDS(on)) when gate-source voltage is 2.5V: 10 m次 (N type), 20 m次 (P type)
- On-resistance (RDS(on)) when gate-source voltage is 4.5V: 6 m次 (N type), 16 m次 (P type)
- Rated current (ID): 15A (N type), -8.5A (P type)
- Technology: Trench
-Package: SOP8
Domain and module applications：
Examples of applicable fields and modules:
1. Motor controller: The dual-channel structure of VBA5206 makes it suitable for the power switch module in the motor controller, which can be used for start-stop control and speed adjustment of the motor.
2. Power management module: In the power management module, VBA5206 can be used as a power switching device for power control of circuits such as DC-DC converters and voltage regulators.
3. Battery protection module: In the lithium battery protection circuit, the double N+P structure of VBA5206 can be used for charging and discharging protection modules to ensure the safety and stability of lithium batteries.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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