Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±100V |
20（±V） |
±2V |
2.2/-1.9A |
|
260/530(mΩ) |
240/490(mΩ) |
Trench |
Detailed parameter description:
- Model: VBA5102M
- Brand: VBsemi
- MOSFET type: Dual N+P
- Drain-source voltage (VDS): ㊣100V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): ㊣2V
- On-resistance (m次) at VGS=4.5V: 260/530 (N/P channel)
- On-resistance (m次) at VGS=10V: 240/490 (N/P channel)
- Drain current (ID): 2.2A (N channel)/-1.9A (P channel)
- Technology: Trench
-Package: SOP8
Domain and module applications：
Examples of application areas and modules:
This product is suitable for the following areas and modules:
1. Power management: used for power switch control in power management systems such as power switches, DC-DC converters and inverters.
2. Motor drive: suitable for stepper motor drivers, DC motor controllers and brushless motor control modules.
3. Automotive electronics: used in automotive electronic modules such as automotive electronic systems, engine control units and vehicle chargers.
4. Industrial automation: suitable for power switch control in industrial robots, automated production lines and PLC systems.
5. Communication equipment: used in power switch control modules in base stations, communication network equipment and data centers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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