VBA5102M Product details
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±100V | 20(±V) | ±2V | 2.2/-1.9A | 260/530(mΩ) | 240/490(mΩ) | Trench |
- Model: VBA5102M
- Brand: VBsemi
- MOSFET type: Dual N+P
- Drain-source voltage (VDS): ㊣100V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): ㊣2V
- On-resistance (m次) at VGS=4.5V: 260/530 (N/P channel)
- On-resistance (m次) at VGS=10V: 240/490 (N/P channel)
- Drain current (ID): 2.2A (N channel)/-1.9A (P channel)
- Technology: Trench
-Package: SOP8
Domain and module applications:
This product is suitable for the following areas and modules:
1. Power management: used for power switch control in power management systems such as power switches, DC-DC converters and inverters.
2. Motor drive: suitable for stepper motor drivers, DC motor controllers and brushless motor control modules.
3. Automotive electronics: used in automotive electronic modules such as automotive electronic systems, engine control units and vehicle chargers.
4. Industrial automation: suitable for power switch control in industrial robots, automated production lines and PLC systems.
5. Communication equipment: used in power switch control modules in base stations, communication network equipment and data centers.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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