Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-P+P |
-60V |
20（±V） |
-1.7V |
-5.3A |
|
60 (mΩ) |
54 (mΩ) |
Trench |
has the following parameters:
The maximum drain-source voltage (VDS) is -60V, the maximum gate-source voltage (VGS) is ㊣20V, and the threshold voltage (Vth) is -1.7V.
When the gate-source voltage is 4.5V, the drain-source resistance is 60m次; when the gate-source voltage is 10V, the drain-source resistance is 54m次.
Its maximum drain current (ID) is -5.3A, using trench technology (Trench).
Domain and module applications：
The VBA4658 transistor is suitable for a variety of fields and modules. For example,
In power switch modules, it can be used in DC-DC converters, power switches and battery chargers. Due to its double P-type structure, this transistor can be used in applications such as power amplification, switching control and reverse power supply protection. In electric vehicle modules, it can be used in motor control, battery management and charging equipment. Furthermore, in industrial automation modules it can be used for power switching, motor control and sensor interfaces.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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