Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-P+P |
-60V |
20（±V） |
-1.7V |
-8.5A |
|
30 (mΩ) |
20 (mΩ) |
Trench |
Detailed parameter description:
- Rated drain-source voltage (VDS): -60V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -1.7V
- Drain-source resistance (m次) when gate-source voltage is 4.5V: 30m次
- Drain-source resistance (m次) when gate-source voltage is 10V: 20m次
- Quiescent drain current (ID): -8.5A
Domain and module applications：
Application introduction:
VBA4625 is suitable for a variety of fields and modules. It has the characteristics of high-performance power switches and can be used in the following scenarios:
1. Power management module: This MOSFET can be used in power switches in power management modules, such as power adapters, voltage regulators, etc., to provide stable and reliable power output.
2. Automotive electronic systems: In automotive electronic systems, VBA4625 can be used in battery management systems and drive control modules of electric vehicles to ensure high efficiency and drive control of the car.
3. Communication equipment: Suitable for power switch modules in communication equipment, such as base stations, communication servers, etc., to ensure stable operation and high performance of the equipment.
4. Industrial automation: This MOSFET can be used in power switches and drive control modules in industrial automation equipment, such as frequency converters, servo drives, etc., to improve the efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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