中文
English
VBA3316SD Product details
Back to previous pageProduct introduction：
VBA3316SD is a half-bridge N+N MOSFET designed for high-efficiency power conversion and driving applications. Its main parameters include:
- Rated drain-to-source voltage (VDS) is 30V, suitable for medium power applications.
- Maximum gate-source voltage (VGS) is 20V, providing a wide operating range.
- Threshold voltage (Vth) is 1.7V, suitable for low voltage control circuits.
- The on-resistance at VGS=4.5V is 22mΩ, and the on-resistance at VGS=10V is 18mΩ. It has low on-resistance and is suitable for high-efficiency power conversion.
- The maximum drain current (ID) is 6.8A (switching state), 10A (conducting state), suitable for high-efficiency power conversion.
- Using Trench technology, it has excellent electrical characteristics and reliability.
VBA3316SD is suitable for high-efficiency power conversion and drive applications, including electric vehicle power modules, power conversion modules, industrial automation control modules and other fields.
- Rated drain-to-source voltage (VDS) is 30V, suitable for medium power applications.
- Maximum gate-source voltage (VGS) is 20V, providing a wide operating range.
- Threshold voltage (Vth) is 1.7V, suitable for low voltage control circuits.
- The on-resistance at VGS=4.5V is 22mΩ, and the on-resistance at VGS=10V is 18mΩ. It has low on-resistance and is suitable for high-efficiency power conversion.
- The maximum drain current (ID) is 6.8A (switching state), 10A (conducting state), suitable for high-efficiency power conversion.
- Using Trench technology, it has excellent electrical characteristics and reliability.
VBA3316SD is suitable for high-efficiency power conversion and drive applications, including electric vehicle power modules, power conversion modules, industrial automation control modules and other fields.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Half-Bridge-N+N | 30V | 20（±V） | 1.7V | 6.8/10A | 22 (mΩ) | 18 (mΩ) | Trench |
parameter:
-Half-Bridge N+N
- VDS(V): 30
-VGS(㊣V): 20
-Vth(V): 1.7
- On-resistance at VGS=4.5V (m次): 22
- On-resistance (m次) at VGS=10V: 18
- ID (A): 6.8/10
- Technology: Trench
Package: SOP8
-Half-Bridge N+N
- VDS(V): 30
-VGS(㊣V): 20
-Vth(V): 1.7
- On-resistance at VGS=4.5V (m次): 22
- On-resistance (m次) at VGS=10V: 18
- ID (A): 6.8/10
- Technology: Trench
Package: SOP8
Domain and module applications：
Application examples:
1. **Electric vehicle power module**: VBA3316SD can be used in the half-bridge inverter in the electric vehicle power module to convert the DC power provided by the battery into AC power to drive the electric motor of the electric vehicle and improve the energy efficiency of the electric vehicle.
2. **Power conversion module**: Due to its half-bridge structure and high-efficiency characteristics, VBA3316SD can be used as a key component in power conversion modules and is suitable for power conversion scenarios such as DC-DC converters and DC-AC inverters. .
3. **Industrial automation control module**: As a power switching device, VBA3316SD can be used in industrial automation control modules to achieve high-efficiency control and drive of machine equipment and improve industrial production efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
