VBA3316 is an SOP8-packaged N+N-channel MOSFET, utilizing Trench technology.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+N | 30V | 20（±V） | 1.7V | 8.5A | 20 (mΩ) | 16 (mΩ) | Trench |
Product model: VBA3316
Brand: VBsemi
parameter:
- Type: Double N type
- Rated drain-source voltage (VDS): 30V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source resistance (m次) at VGS=4.5V: 20
- Drain-source resistance (m次) at VGS=10V: 16
- Drain current (ID): 8.5A
- Technology: Trench
Package: SOP8
This VBA3316 product is suitable for the following areas and modules:
1. Power management module: Can be used to design dual-channel power management modules, such as power switches and battery management systems, to provide dual power control and power management functions.
2. Motor drive: Suitable for designing dual-channel motor drive modules, such as dual-motor electric vehicle controllers and dual-axis robotic arm control systems, to provide parallel control of multiple motors.
3. Current detection and regulation: Can be used to design current detection and regulation modules for current measurement and current regulation applications, such as electric vehicle current monitoring and power supply current protection.
4. Inverter: Suitable for designing dual-channel inverter modules, such as dual-channel solar inverters and dual-output power electronic inverters, to provide dual-channel power conversion and output.
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