Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
20V |
20（±V） |
0.5~1.5V |
13A |
|
11 (mΩ) |
8 (mΩ) |
Trench |
Product model: VBA1210
Brand: VBsemi
parameter:
- Single N-type field effect transistor
- VDS (drain-source voltage): 20V
- VGS (gate-source voltage): ㊣20V
- Threshold voltage (Vth): 0.5~1.5V
- Drain-source resistance (m次) at VGS=4.5V: 11
- Drain-source resistance (m次) at VGS=10V: 8
- Maximum drain current (ID): 13A
- Technology: Trench
Package: SOP8
Domain and module applications：
Application introduction and examples:
Because the VBA1210 has high drain-source voltage and drain current, as well as low drain-source resistance, it is suitable for use in a variety of power management, motor drive, and power conversion applications. For example:
1. Power management module: VBA1210 can be used as a power switch to control the switching status of the power supply, and plays the role of voltage stabilization and protection circuit in the power management module.
2. Motor drive module: Due to its high drain current and low drain-source resistance, VBA1210 can be used to drive DC motors or stepper motors, providing stable current output for controlling the rotation and speed of the motor.
3. Power conversion module: VBA1210 can be used as a power switch tube in power conversion applications. It is used in power converters such as DC-DC converters and DC-AC inverters to achieve Effective conversion and control of energy.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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