Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-6 |
Single-N |
30V |
20(±V) |
1.7V |
6A |
|
27 (mΩ) |
26 (mΩ) |
Trench |
Product model: VB7322
Brand: VBsemi
parameter:
- MOSFET type: Single N
- Rated drain-source voltage (VDS): 30V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Static operating resistance (RDS(on)):
- When VGS=4.5V: 27m次
- When VGS=10V: 26m次
- Rated drain current (ID): 6A
- Technology: Trench
Package: SOT23-6
Domain and module applications:
Application introduction:
This product is suitable for small circuit control and low power applications, and is commonly used in the following fields and modules:
1. Portable electronic devices: Used in portable electronic devices such as smart watches and portable speakers to achieve low power consumption and compact design.
2. Battery management module: used in battery management modules such as lithium battery charge and discharge management and battery protection to achieve stable charge, discharge and protection functions of the battery.
3. Sensor interface module: used in sensor interface modules such as sensor signal amplification and data collection to achieve accurate collection and processing of sensor signals.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours