Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-6 |
Single-N |
200V |
20（±V） |
3V |
4A |
|
200 (mΩ) |
160 (mΩ) |
Trench |
parameter:
- Type: Single N channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 200V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source on-resistance (m次) at VGS=4.5V: 200
- Drain-source on-resistance (m次) at VGS=10V: 160
- Maximum drain current (ID): 4A
- Technology: Trench structure (Trench)
Package: SOT23-6
Domain and module applications：
Application examples:
1. Portable electronic products: VB7202M is suitable for power management, battery charge and discharge control and signal switching in portable electronic products, helping to extend battery life and improve equipment efficiency.
2. Low-power modules: Due to its low drain current and high efficiency characteristics, VB7202M can be used as power switches and voltage regulators in low-power modules to provide stable and reliable power management.
3. Smart sensor: In smart sensors, VB7202M can be used in the signal processing and transmission part to achieve low power consumption and high-precision data collection and processing.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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