Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-6 |
Dual-N+P |
±60V |
20（±V） |
1.8/-1.7V |
±4A |
|
8/8(mΩ) |
10/10(mΩ) |
Trench |
Detailed parameter description:
- Model: VB5610N
- Brand: VBsemi
- MOSFET type: Dual N+P
- Drain-source voltage (VDS): ㊣60V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V (N channel)/-1.7V (P channel)
- On-resistance (m次) at VGS=4.5V: 8/8 (N/P channel)
- On-resistance (m次) at VGS=10V: 10/10 (N/P channel)
- Drain current (ID): ㊣4A
- Technology: Trench
-Package: SOT23-6
Domain and module applications：
Examples of application areas and modules:
This product is suitable for the following areas and modules:
1. Power management: used for power switch control in power management systems such as switching power supplies, battery management systems and inverters.
2. Power tools: Suitable for power control modules in industrial and household power tools such as electric drills, electric saws and electric grinding wheels.
3. Automotive electronics: used in automotive electronic modules such as automotive electronic systems, engine control units and vehicle chargers.
4. LED lighting: used in LED drivers, lighting control systems and lighting control modules to achieve dimming and color matching of LED lights.
5. Mobile devices: Suitable for power management and power control in smartphones, tablets and portable electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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