Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-6 |
Dual-N+P |
±40V |
20（±V） |
1.8/-1.7V |
8/-4A |
|
35/80(mΩ) |
30/70(mΩ) |
Trench |
Detailed parameter description:
- Brand: VBsemi
- Model: VB5460
- Type: Dual N+P type power MOSFET
- Rated voltage (VDS): ㊣40V
- Gate-source voltage range (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V (N type), -1.7V (P type)
- On-resistance (RDS(on)) when gate-source voltage is 4.5V: 35 m次 (N type), 80 m次 (P type)
- On-resistance (RDS(on)) when gate-source voltage is 10V: 30 m次 (N type), 70 m次 (P type)
- Rated current (ID): 8A (N type), -4A (P type)
- Technology: Trench
-Package: SOT23-6
Domain and module applications：
Examples of applicable fields and modules:
1. Power management module: The low-power characteristics of VB5460 make it suitable for some low-power power management modules, such as small voltage regulators, switching power supplies, etc.
2. Handheld devices: This device has a compact package and is suitable for power switch modules in handheld devices, such as power management in smartphones, tablets, etc.
3. LED light driver: In the field of LED lighting, VB5460 can be used as a power switching device in the LED light driver for dimming and driving LED lights.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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