VB4610N Product details
Product introduction:
This product uses Trench technology and is packaged in SOT23-6.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -60V | 20(±V) | -1.7V | -4.5A | 85 (mΩ) | 70 (mΩ) | Trench |
The working voltage VDS is -60V,
The gate-source voltage VGS is ㊣20V,
The threshold voltage Vth is -1.7V,
The on-resistance when VGS=4.5V is 85m次,
The on-resistance when VGS=10V is 70m次,
The maximum leakage current ID is -4.5A.
Domain and module applications:
1. Power management module: In power management systems that require dual P-type MOSFETs, VB4610N can be used to control the switching and regulation of the power supply. Its low on-resistance and dual-circuit design enable it to provide more flexible and reliable power control, such as power switching modules used in DC-DC converters.
2. Electric vehicle control module: In the control system of electric vehicles, VB4610N can be used to drive the motor of electric vehicles and control various functional modules of the vehicle. Its high voltage and dual-circuit design make it suitable for applications requiring dual-circuit power switching, such as motor driver modules in e-bikes.
3. Industrial automation module: In the field of industrial automation, VB4610N can be used in drive motor modules, sensor interface modules and industrial robot control modules in factory automation systems. Its dual-channel design and moderate power characteristics enable it to meet complex control needs in industrial environments with reliable performance.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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