Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-6 |
Dual-P+P |
-60V |
20(±V) |
-1.7V |
-4.5A |
|
85 (mΩ) |
70 (mΩ) |
Trench |
Has the following main parameters:
The working voltage VDS is -60V,
The gate-source voltage VGS is ㊣20V,
The threshold voltage Vth is -1.7V,
The on-resistance when VGS=4.5V is 85m次,
The on-resistance when VGS=10V is 70m次,
The maximum leakage current ID is -4.5A.
Domain and module applications:
VB4610N is suitable for application modules in a variety of fields, such as:
1. Power management module: In power management systems that require dual P-type MOSFETs, VB4610N can be used to control the switching and regulation of the power supply. Its low on-resistance and dual-circuit design enable it to provide more flexible and reliable power control, such as power switching modules used in DC-DC converters.
2. Electric vehicle control module: In the control system of electric vehicles, VB4610N can be used to drive the motor of electric vehicles and control various functional modules of the vehicle. Its high voltage and dual-circuit design make it suitable for applications requiring dual-circuit power switching, such as motor driver modules in e-bikes.
3. Industrial automation module: In the field of industrial automation, VB4610N can be used in drive motor modules, sensor interface modules and industrial robot control modules in factory automation systems. Its dual-channel design and moderate power characteristics enable it to meet complex control needs in industrial environments with reliable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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