Product introduction：
This product is a dual-channel P-type MOSFET with the following characteristics:
- Withstand voltage: VDS can reach a maximum of -20V, VGS can reach a maximum of ±20V, suitable for a variety of application scenarios.
- Threshold voltage: Vth is -0.6V, allowing the MOSFET to operate normally under a certain voltage.
- On-resistance: When VGS is 2.5V, the on-resistance is 90mΩ; when VGS is 4.5V, the on-resistance is 65mΩ, which has low on-resistance characteristics.
- Maximum current: ID can reach up to -4A, suitable for small and medium power circuits.
- Technology: Manufactured using Trench technology for high performance and reliability.
-Package: SOT23-6, suitable for layout design in limited space.
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Domain and module applications：
Application introduction:
This product is suitable for the following areas and modules:
1. Power management module: Due to its dual-channel design and low on-resistance, it can be used in power switches and power regulators to provide stable power output.
2. Battery protection module: It can be used in the lithium battery protection circuit to protect the battery from over-discharge and over-charge, thereby improving the safety and service life of the battery.
3. Low-power application module: Due to low static power consumption and low on-resistance, it is suitable for low-power application scenarios such as portable devices and wireless sensor networks, extending the battery life of the device.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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