VB2610N Product details
Product introduction:
This product is packaged in SOT23-3.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -60V | 20(±V) | -1.7V | -4.5A | 85 (mΩ) | 70 (mΩ) | Trench |
Maximum drain-source voltage (VDS) is -60V,
The maximum gate-source voltage (VGS) is ㊣20V, and the threshold voltage (Vth) is -1.7V.
When the gate-source voltage is 4.5V, the drain-source resistance is 85m次; when the gate-source voltage is 10V, the drain-source resistance is 70m次.
Its maximum drain current (ID) is -4.5A, using trench technology (Trench).
Domain and module applications:
In power management modules, it can be used in battery management systems, DC-DC converters and power switches.
Due to its small package and low power consumption, this transistor is particularly suitable for power management and power control in portable electronics.
In the sensor interface module, it can be used for sensor signal conditioning and data acquisition.
In addition, in medical device modules, it can be used for power management and signal amplification of medical equipment.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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