Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P |
-60V |
20（±V） |
-1.7V |
-4.5A |
|
85 (mΩ) |
70 (mΩ) |
Trench |
parameter:
Maximum drain-source voltage (VDS) is -60V,
The maximum gate-source voltage (VGS) is ㊣20V, and the threshold voltage (Vth) is -1.7V.
When the gate-source voltage is 4.5V, the drain-source resistance is 85m次; when the gate-source voltage is 10V, the drain-source resistance is 70m次.
Its maximum drain current (ID) is -4.5A, using trench technology (Trench).
Domain and module applications：
VB2610N transistor is suitable for a variety of fields and modules. For example,
In power management modules, it can be used in battery management systems, DC-DC converters and power switches.
Due to its small package and low power consumption, this transistor is particularly suitable for power management and power control in portable electronics.
In the sensor interface module, it can be used for sensor signal conditioning and data acquisition.
In addition, in medical device modules, it can be used for power management and signal amplification of medical equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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