Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P |
-40V |
20（±V） |
-1.7V |
-3.6A |
|
100 (mΩ) |
71 (mΩ) |
Trench |
Detailed parameter description:
- Rated drain-source voltage (VDS): -40V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -1.7V
- Drain-source resistance (m次) when gate-source voltage is 4.5V: 100m次
- Drain-source resistance (m次) when gate-source voltage is 10V: 71m次
- Quiescent drain current (ID): -3.6A
Domain and module applications：
Application introduction:
VB2470 is suitable for a variety of fields and modules. It has the characteristics of high-performance power switches and can be used in the following scenarios:
1. Portable electronic products: This MOSFET has a compact package and is suitable for power management and power switching modules in portable electronic products, such as smartphones, tablets, etc.
2. Battery protection circuit: In the battery protection circuit, VB2470 can be used to implement functions such as overcharge and over-discharge protection to ensure the safety and stability of the battery.
3. Signal switch: suitable for various signal switch circuits, such as analog switches, digital switches, etc., to achieve signal control and switching.
4. Small power inverter: This MOSFET can be used as a power switch module in small power inverters, such as small inverter welding machines, chargers, etc., to achieve high-efficiency power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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