Product introduction：
VBsemi's VB2101K is a Single P-type MOSFET with excellent performance and stability. Its VDS can reach -100V, VGS operating range is ±20V, and the threshold voltage is -2V. Using Trench technology, it has lower turn-on resistance and high switching speed, suitable for a variety of power control and switching applications.
The on-resistance of VB2101K is 560mΩ when VGS=4.5V and 500mΩ when VGS=10V, providing low on-state voltage drop and high performance. Its maximum leakage current ID is -1.5A and can withstand a certain current load.
VB2101K is a small, low-power Single P-type MOSFET, suitable for many fields and modules such as mobile devices, sensor interfaces and medical electronics, providing stable and reliable power and control solutions for various applications.
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Domain and module applications：
VB2101K is suitable for multiple fields and modules, such as:
- **Mobile Device Module:** Due to its small package and low power consumption, VB2101K can be used for power management and signal switching in mobile devices, improving the efficiency and battery life of the device.
- **Sensor interface module:** In the sensor interface circuit, VB2101K can be used as a signal conditioning device to achieve stable collection and processing of sensor signals.
- **Medical Electronic Module:** Due to its stability and low power consumption characteristics, VB2101K is suitable for power management and control in medical electronic equipment to ensure the safety and reliability of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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