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VBJ17R04SE Product details
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Product introduction:
VBsemi VBJ17R04SE is a single N-channel field effect transistor with up to 700V drain-source voltage (VDS) and 4A drain current (ID). Manufactured with SJ_Deep-Trench technology for reliable performance and stability. The package is SOT223, suitable for a variety of applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 700V | 30（±V） | 3.5V | 4A | 1100(mΩ) | SJ_Deep-Trench |
Detailed parameter description:
- Model: VBJ17R04SE
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 1100
- Drain current (ID): 4A
- Process technology: SJ_Deep-Trench
-Package: SOT223
Domain and module applications：
Examples of applicable fields and modules:
1. Small power module: Due to its compact package, it is suitable for small power modules, such as mobile phone chargers, small power tools, etc.
2. Consumer electronics: It can be used in power switch modules in consumer electronics, such as TVs, speakers, etc.
3. Electric toys: Suitable for motor drive modules in electric toys to provide driving force and control.
4. Smart home equipment: used in power switch modules in smart home equipment to realize intelligent control and management of equipment.
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
