Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
40V |
20（±V） |
1.8V |
4.8A |
|
40 (mΩ) |
35 (mΩ) |
Trench |
Product model: VB1435
Brand: VBsemi
parameter:
- MOSFET type: Single N
- Rated drain-source voltage (VDS): 40V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V
- Static operating resistance (RDS(on)):
- When VGS=4.5V: 40m次
- When VGS=10V: 35m次
- Rated drain current (ID): 4.8A
- Technology: Trench
Package: SOT23-3
Domain and module applications：
Application introduction:
This product is suitable for low-power, low-on-resistance application scenarios and is commonly used in the following fields and modules:
1. Small power management module: used in small power management modules such as smart home devices and portable electronic products to achieve efficient energy consumption and compact design.
2. Low-power LED lighting driver module: used in low-power LED lighting driver modules such as small LED flashlights and lighting fixtures to achieve energy-saving, environmentally friendly and long-life lighting products.
3. Sensor interface module: used in low-power sensor interface modules such as sensor signal amplification and data collection to achieve accurate data collection and processing.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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