Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-3 |
Single-N |
60V |
±20V |
1.7V |
5.5A |
|
33(mΩ) |
30(mΩ) |
|
Model: ST3422AS23RG-VB
Silkscreen: VBB1630
Brand: VBsemi
Parameters:
- N-channel
- Rated voltage: 60V
- Maximum leakage current: 5.5A
- Static drain-source resistance (RDS(ON)): 30mΩ @ 10V, 36mΩ @ 4.5V, ±20Vgs
- Threshold voltage (Vth) range: 1V to 3V
- Package: SOT23-3L
Domain and module applications:
Here are some possible application areas and modules:
1. **Power Switch**: This N-channel MOSFET is suitable for low-power power switching modules such as power switching circuits, voltage regulators, and power adapters. It can effectively control current and voltage, making it suitable for low-power power management applications.
2. **Signal Switch**: The ST3422AS23RG-VB can be used in signal switching applications such as analog signal switching, digital signal switching, and signal amplifiers.
3. **Power Switch and Control**: In various low-power electronic switching and control applications, this MOSFET can be used for power switching, circuit control, and power adapters.
4. **Current Regulation Module**: It can also be used in low-power current regulation modules such as LED drivers, current regulation circuits, and power management units to ensure the stability and accuracy of circuit output.
5. **Low-Power Electronic Switch**: It has a wide range of uses in various low-power electronic switching applications, including low-power electronic switching, low-power circuit protection, and low-power signal switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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