推广型号

Your present location > Home page > 推广型号

SQ2309ES-T1-GE3-VB Product details

Product introduction:


### Application Introduction:

SQ2309ES-T1-GE3-VB is a P-Channel field effect transistor in SOT23-3 package. Due to its small package, small current, and negative power supply voltage, it is suitable for some low-power and small-signal load switch applications.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-P -60V ±20V -1.7V -5.2A 52(mΩ) 50(mΩ)
Model: SQ2309ES-T1-GE3-VB

Silkscreen: VB2658

Brand: VBsemi

### Detailed parameter description:

- **Package type:** SOT23-3
- **Channel type:** P-Channel
- **Rated voltage (VDS):** -60V
- **Maximum continuous current (ID):** -5.2A
- **On-resistance (RDS(ON)):**
- @ VGS = 10V: 40mΩ
- @ VGS = ±20V: No specific value provided
- **Threshold voltage (Vth):** -2V

Domain and module applications:

### Applicable fields and modules:

1. **Low-power power switch:** Applicable to some low-power load switch modules, such as power management modules in portable electronic devices.

2. **Analog switch:** Due to its low current and small package, it can be used for low-power switches in analog circuits, such as signal selection switches, etc.

3. **Sensor interface:** In sensor interface circuits that require negative power supply voltage, SQ2309ES-T1-GE3-VB can be used to implement switching functions with low power consumption.

### Precautions for use:

1. **Voltage level:** During use, make sure not to exceed the rated voltage of -60V.

2. **Current limit:** Do not exceed the specified maximum continuous current, which is -5.2A.

3. **Threshold voltage:** Note that the threshold voltage is -2V, and the appropriate voltage range needs to be considered when designing the circuit.

4. **Heat dissipation:** Due to its low power characteristics, additional heat dissipation is usually not required.

5. **Static electrostatic protection:** During operation, take appropriate static electrostatic protection measures to prevent damage to the transistor.

Please note that this is only a basic overview, and the specific design and application needs to be carried out according to the specific project requirements and the manufacturer's recommendations. Before using the device, be sure to consult the relevant data sheet and technical documentation for detailed information and guidance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

Online

Telephone

400-655-8788

WeChat

Topping

Sample Req
Online
Telephone
WeChat