Application Introduction:
LBSS139LT1G is an N-channel MOSFET suitable for various power management and low-power applications. It has lower rated current and higher rated voltage characteristics.

By controlling the gate-source voltage of ±20Vgs (±V), the switch tube can be turned on and off, and the current can be controlled and the switching state can be converted. Its higher on-resistance means operation at a lower current.

LBSS139LT1G is an N-channel MOSFET suitable for power management and low-power applications. It is suitable for circuits in low-power fields such as power management, signal processing, and low-power control circuits.