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2N7002LT1G-VB Product details
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Application Introduction:
2N7002LT1G-VB is an N-channel low-power MOSFET suitable for electronic applications requiring low-power power switching.
The parameters of this device make it suitable for applications requiring low-power power switching and power management, especially where low static power consumption is required. In actual applications, be sure to comply with the electrical specifications and operating conditions in the data sheet to ensure optimal performance and reliability.
2N7002LT1G-VB is an N-channel low-power MOSFET suitable for electronic applications requiring low-power power switching.
The parameters of this device make it suitable for applications requiring low-power power switching and power management, especially where low static power consumption is required. In actual applications, be sure to comply with the electrical specifications and operating conditions in the data sheet to ensure optimal performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 3100(mΩ) | 2800(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Model: 2N7002LT1G-VB
Silkscreen: VB162K
Brand: VBsemi
Parameters:
- Channel type: N-channel
- Rated voltage: 60V
- Maximum continuous current: 0.3A
- Static on resistance (RDS(ON)): 2800mΩ @ 10V, 3000mΩ @ 4.5V
- Gate-source voltage (Vgs): ±20V (±V)
- Threshold voltage (Vth): 1.6V
- Package type: SOT23-3
Silkscreen: VB162K
Brand: VBsemi
Parameters:
- Channel type: N-channel
- Rated voltage: 60V
- Maximum continuous current: 0.3A
- Static on resistance (RDS(ON)): 2800mΩ @ 10V, 3000mΩ @ 4.5V
- Gate-source voltage (Vgs): ±20V (±V)
- Threshold voltage (Vth): 1.6V
- Package type: SOT23-3
Domain and module applications：
Here are some possible application areas for the modules:
1. **Power Management Module**: This low-power MOSFET can be used in power management modules to implement switching and power management of power supplies. It is very useful for applications that require extremely low static power consumption.
2. **Battery Powered Module**: In portable devices and battery-powered systems, the 2N7002LT1G-VB can be used in battery protection circuits, battery management systems, and low-power power modules.
3. **Sensor Interface Module**: For applications that need to communicate with sensors, this MOSFET can be used in sensor interface modules to achieve low-power data acquisition and communication.
4. **Mobile Device Module**: In mobile devices, the 2N7002LT1G-VB can be used to control and manage different power modules of the device to extend battery life.
5. **Low-Power Electronic Module**: In applications that require extremely low power consumption, such as low-power computing, portable medical devices, and low-power sensor nodes, this MOSFET can be used for power management and power control.
1. **Power Management Module**: This low-power MOSFET can be used in power management modules to implement switching and power management of power supplies. It is very useful for applications that require extremely low static power consumption.
2. **Battery Powered Module**: In portable devices and battery-powered systems, the 2N7002LT1G-VB can be used in battery protection circuits, battery management systems, and low-power power modules.
3. **Sensor Interface Module**: For applications that need to communicate with sensors, this MOSFET can be used in sensor interface modules to achieve low-power data acquisition and communication.
4. **Mobile Device Module**: In mobile devices, the 2N7002LT1G-VB can be used to control and manage different power modules of the device to extend battery life.
5. **Low-Power Electronic Module**: In applications that require extremely low power consumption, such as low-power computing, portable medical devices, and low-power sensor nodes, this MOSFET can be used for power management and power control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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