Product introduction：
**Detailed parameter description:**
1. **Channel type:** N—Channel, indicating that this is an N-channel MOSFET.
2. **Maximum voltage (VDS):** 100V, indicating the maximum drain-source voltage that the device can withstand.
3. **Maximum current (ID):** 0.17A, indicating the maximum drain current that the device can withstand.
4. **On-resistance (RDS(ON)):** 2800mΩ @ VGS=10V,
--VGS=±20V, this is the drain-source resistance in the on state at different gate voltages.
5. **Gate threshold voltage (Vth):** 1.28V, which is the minimum gate voltage required to turn the device into the on state.
**Application introduction:**
BSS123Q-7-VB is an N-channel field effect transistor (MOSFET), commonly used in low power consumption, small signal amplification and switching power supply applications. Due to its small size and low power consumption, it is suitable for electronic devices that require compactness, lightness and low power consumption.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
100V |
±20V |
1.5V |
0.26A |
|
3000(mΩ) |
2800(mΩ) |
|
Model: BSS123Q-7-VB
Silkscreen: VB1106K
Brand: VBsemi
Package: SOT23-3
Channel type: N—Channel
Maximum voltage (VDS): 100V
Maximum current (ID): 0.17A
On-resistance (RDS(ON)): 2800mΩ @ VGS=10V,
--VGS=±20V
Gate threshold voltage (Vth): 1.28V
Domain and module applications：
**Applications:**
1. **Signal Switch:** Used for small signal switching, such as signal switching in audio amplifiers.
2. **Low Power Electronics:** Suitable for portable electronic devices such as mobile phones and tablets to achieve low power operation.
3. **Power Switch:** Used in low-power switching power supplies, such as small battery-powered devices.
4. **Analog Circuits:** Used for signal conditioning and switching functions in analog circuits.
**Precautions for Use:**
1. **Maximum Ratings:** Do not exceed the maximum current and voltage values specified in the device specifications.
2. **Static Electrostatic Protection:** When handling and installing the device, please take static electrostatic protection measures to prevent damage to the device due to electrostatic discharge.
3. **Application Circuit Design:** When designing the circuit, please refer to the data sheet and application notes provided by the manufacturer to ensure the correct power supply and control circuit.
Please note that the above information is general recommendations based on the parameters provided and general experience. In actual applications, always refer to the specific data sheet and application guide provided by the manufacturer.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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