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BSS123LT1G-VB Product details

Product introduction:

### Application Introduction:

BSS123LT1G-VB is an N-Channel field effect transistor in SOT23-3 package. Due to its low current, low voltage and small package characteristics, it is suitable for some low power consumption and small signal switch applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N 100V ±20V 1.5V 0.26A 3000(mΩ) 2800(mΩ)
Model: BSS123LT1G-VB
Silkscreen: VB1106K
Brand: VBsemi
### Detailed parameter description:
- **Package type:** SOT23-3
- **Channel type:** N-Channel
- **Rated voltage (VDS):** 100V
- **Maximum continuous current (ID):** 0.17A
- **On-resistance (RDS(ON)):**
- @ VGS = 10V: 2800mΩ
- @ VGS = ±20V: No specific value is provided
- **Threshold voltage (Vth):** 1.28V

Domain and module applications:

### Applicable fields and modules:

1. **Small signal switch module:** Due to its low current and low voltage characteristics, BSS123LT1G-VB can be used to design small signal switch modules, such as controlling low-power LEDs, sensors, etc. in electronic devices.

2. **Power switch:** In some low-power power switches, it can be used to control the switching of the power supply to achieve energy saving and management of the power supply.

3. **Analog circuit switch:** Suitable for small signal switches in analog circuits, such as analog switching power supplies, analog signal selection, etc.

### Precautions for use:

1. **Voltage level:** During use, make sure not to exceed the rated voltage of 100V.

2. **Current limit:** Do not exceed the specified maximum continuous current, which is 0.17A.

3. **Threshold voltage:** Note that the threshold voltage is 1.28V, and the appropriate voltage range needs to be considered when designing the circuit.

4. **Heat dissipation:** Normally, due to its low power characteristics, no additional heat dissipation is required.

5. **Static electrostatic protection:** During operation, take appropriate static electrostatic protection measures to prevent damage to the transistor.

Please note that this is only a basic overview, and the specific design and application needs to be carried out according to the specific project requirements and the manufacturer's recommendations. Before using the device, be sure to consult the relevant data sheet and technical documentation for detailed information and guidance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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