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HM3N10MR-VB Product details
Back to previous pageProduct introduction：
Application Introduction:
HM3N10MR-VB is an N-Channel power field effect transistor in SOT23-3 package. It has a low on-resistance (RDS(ON)) of 246mΩ at 10V and ±20V, a maximum voltage withstand capability of 100V, a maximum current of 2A, and a threshold voltage of 2V. This makes the product suitable for a variety of application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 100V | 1.5V | 2A | 260(mΩ) | 240(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 100V | 1.5V | 2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 100V | 1.5V | 2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Model: HM3N10MR-VB
- Silkscreen: VB1102M
- Brand: VBsemi
- Package: SOT23-3
- Channel type: N—Channel
- Maximum voltage: 100V
- Maximum current: 2A
- RDS(ON)（Internal resistance when conducting）：246mΩ @ VGS=10V,
--VGS=±20V
- Threshold voltage（Vth）：2V
- Silkscreen: VB1102M
- Brand: VBsemi
- Package: SOT23-3
- Channel type: N—Channel
- Maximum voltage: 100V
- Maximum current: 2A
- RDS(ON)（Internal resistance when conducting）：246mΩ @ VGS=10V,
--VGS=±20V
- Threshold voltage（Vth）：2V
Domain and module applications：
Example Applications:
1. **Power Switch Module**: The high voltage withstand capability and low on-resistance of the HM3N10MR-VB make it an ideal choice in power switch modules for efficient power switch control.
2. **Current Control and Regulation Module**: Due to its N-Channel channel type and low threshold voltage, this transistor is suitable for designing current control and regulation modules for various current management needs.
3. **Power Inverter Module**: In power inverters, the HM3N10MR-VB can be used to achieve efficient power inverter control for applications such as solar inverters.
Please note that the specific application depends on the system requirements and design parameters, and appropriate circuit design and testing are recommended in actual applications.
1. **Power Switch Module**: The high voltage withstand capability and low on-resistance of the HM3N10MR-VB make it an ideal choice in power switch modules for efficient power switch control.
2. **Current Control and Regulation Module**: Due to its N-Channel channel type and low threshold voltage, this transistor is suitable for designing current control and regulation modules for various current management needs.
3. **Power Inverter Module**: In power inverters, the HM3N10MR-VB can be used to achieve efficient power inverter control for applications such as solar inverters.
Please note that the specific application depends on the system requirements and design parameters, and appropriate circuit design and testing are recommended in actual applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
