Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
100V |
±20V |
1.5V |
2A |
|
260(mΩ) |
240(mΩ) |
|
Model: SI2324DS-T1-GE3
Silkscreen: VB1102M
- Type: N-channel MOSFET
- Maximum withstand voltage: 100V
- Maximum current: 2A
- On-resistance: 246mΩ @10V, 260mΩ @4.5V
- Gate-source voltage: ±20Vgs
- Gate threshold voltage: 2Vth
- Package: SOT23-3
Domain and module applications：
The device has fast switching speed and low switching loss, suitable for a variety of applications, including but not limited to:
1. Power management module: can be used for current control and power switching in switching power supplies.
2. Motor drive module: can be used to drive small DC motors or stepper motors.
3. Lighting module: can be used for LED driving and dimming control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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