SI2324DS-T1-GE3-VB Product details
Product introduction:
Application Introduction:
SI2324DS-T1-GE3 is an N-channel MOSFET suitable for circuits that need to switch high voltage and high current. Its maximum withstand voltage is 100V, maximum current is 2A, and it has low on-resistance to support high power transmission.
It is suitable for module design in application fields that require high voltage and high current, such as power management, motor drive and lighting control.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 100V | 1.5V | 2A | 260(mΩ) | 240(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 100V | 1.5V | 2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 100V | 1.5V | 2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Silkscreen: VB1102M
- Type: N-channel MOSFET
- Maximum withstand voltage: 100V
- Maximum current: 2A
- On-resistance: 246mΩ @10V, 260mΩ @4.5V
- Gate-source voltage: ±20Vgs
- Gate threshold voltage: 2Vth
- Package: SOT23-3
Domain and module applications:
1. Power management module: can be used for current control and power switching in switching power supplies.
2. Motor drive module: can be used to drive small DC motors or stepper motors.
3. Lighting module: can be used for LED driving and dimming control.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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