Product introduction：
MTE100N10KRN3-VB Silkscreen: VB1101M Brand: VBsemi Parameters: SOT23-3; N-Channel, 100V; 4.3A; RDS(ON)=120mΩ@VGS=10V,
--VGS=±20V; Vth=1.2~2.8V Package: SOT23-3
Application Introduction:
MTE100N10KRN3-VB is an N-Channel field effect transistor suitable for SOT23-3 package. Its characteristics include high load voltage and high current, suitable for a variety of circuits and module applications. Due to its high rated voltage and low threshold voltage, the device is often used in electronic equipment that requires high performance and high reliability, such as power inverters, switching power supplies, motor drives, etc.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
100V |
±20V |
1.8V |
4.3A |
|
141(mΩ) |
100(mΩ) |
|
- Model: MTE100N10KRN3-VB
- Silkscreen: VB1101M
- Brand: VBsemi
- Parameters:
- Package type: SOT23-3
- Channel type: N—Channel
- Rated voltage: 100V
- Rated current: 4.3A
- On resistance: 120mΩ @ VGS=10V,
--VGS=±20V
- Threshold voltage: 1.2~2.8V
Domain and module applications：
For example:
MTE100N10KRN3-VB can be widely used in power inverters, industrial motor drives, power management modules, etc. In power electronic modules, it can be used to design high-performance, high-efficiency power systems, as well as other applications that require stable and reliable current switch control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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